10/7/2023 0 Comments Defects in crystal latticeIn: Moss TS, Keller SP (eds) Handbook of semiconductors, vol 3. Gordon & Breach, New Yorkĭe Kock AJR (1980) Crystal growth of bulk crystals: purification, doping and defects. Oxford University Press, LondonĬottrell AH (1964) Theory of crystal dislocations. J Mater Res 32:1555Ĭottrell AH (1958) Dislocations and plastic flow in crystals. Semicond Sci Technol 7:A300Ĭhen N, Gray S, Hernandez-Rivera E, Huang D, LeVan PD, Gao F (2017) Computational simulation of threshold displacement energies of GaAs. Phys Rev Lett 54:360Ĭhen TP, Chen LJ, Huang TS, Guo YD (1992) Transmission electron microscope investigation of dislocation loops in Si-doped GaAs crystals. Phys Rev Lett 52:1814Ĭar R, Kelly PJ, Oshiyama A, Pantelides ST (1985) Microscopic theory of impurity-defect reactions and impurity diffusion in silicon. ibid 42:378 (Consideration of stress fields due to shifts in a regular crystal lattice I Investigation on the geometric relation of displacements in simple crystals under the influence of stress II Solutions of elasticity equations for anisotropic matter with regular symmetry in German)Ĭar R, Kelly PJ, Oshiyama A, Pantelides ST (1984) Microscopic theory of atomic diffusion mechanisms in silicon. Lösungen der Elastizitätsgleichungen für anisotrope Substanzen mit regulärer Symmetrie. Untersuchung der geometrischen Beziehungen bei den Verschiebungen in einfachen Krystallen unter dem Einfluss von Spannungen. Philips Res Rep 9:366īurgers JM (1939) Betrachtungen über die auf Grund von Verlagerungen im regulären Krystallgitter auftretenden Spannungsfelder. Trans Metall Soc AIME 227:546īrouwer G (1954) A general asymmetric solution of reaction equations common in solid state chemistry. Eur Phys J Appl Phys 2:99īrooks H (1963) Binding in metals. Phys Stat Sol A 171:59īrochard S, Rabier J, Grilhé J (1998) Nucleation of partial dislocations from a surface-step in semiconductors: a first approach of the mobility effect. Proc Phys Soc London 52:54īranchu S, Pailloux F, Garem H, Rabier J, Demenet JL (1999) Partial dislocation source in InSb: a new mechanism. Mater Sci Semicon Process 9:471īragg WL, Burgers WG (1940) Slip in single crystals: discussion. Mater Res Soc Bull 25:22īracht H, Brotzmann S (2006) Atomic transport in germanium and the mechanism of arsenic diffusion. Springer, Berlinīracht H (2000) Diffusion mechanisms and intrinsic point-defect properties in silicon. Phys Lett A 38:135īourgoin J, Lannoo M (1983) Point defects in semiconductors II: experimental aspects. Semicond Sci Technol 7:A263īourgoin J, Corbett JW (1972) A new mechanism for interstitial migration. J Appl Phys 68:5064īerg A, Brough I, Evans JH, Lorimer G, Peaker AR (1992) Recombination-generation behaviour of decorated defects in silicon. Ultramicroscopy 51:221īerding MA, Sher A, Chen A-B (1990) Vacancy formation and extraction energies in semiconductor compounds and alloys. CRC Press Taylor & Francis, Boca Ratonīauer S, Rosenauer A, Link P, Kuhn W, Zweck J, Gebhardt W (1993) Misfit dislocations in epitaxial ZnTe/GaAs (001) studied by HRTEM. Phys Rev B5:3988Īyers JE (2007) Heteroepitaxy of semiconductors. Jpn J Appl Phys 53:100201Īmmerlaan CAJ, Watkins GD (1972) Electron-paramagnetic-resonance detection of optically induced divacancy alignment in silicon. KeywordsĪkasaka T, Yamamoto H (2014) Nucleus and spiral growth mechanisms of nitride semiconductors in metalorganic vapor phase epitaxy. Planar defects comprise stacking faults, grain and twin boundaries, inversion-domain boundaries, and interfaces between different semiconductors or between a semiconductor and a metal. Dislocations are characterized by their Burgers vector and its angle to the dislocation line, and their mobility is provided by glide and climb processes. Most important are edge and screw dislocations, which affect crystal growth and accommodate strain in semiconductors. The mobility of defects is provided by various diffusion mechanisms and affected by their charge. Their creation is interrelated – among each other and also to the presence of extrinsic (impurity) defects – and governed by the conservation of particles and quasi-neutrality. Native (intrinsic) point defects and associates of these defects are formed at elevated temperature and may be frozen-in with decreasing temperature. Other defects promote nonradiative carrier recombination, carrier trapping, or excessive carrier scattering and are detrimental to device performance. These defects determine the desired electronic and optical properties of the semiconductor. Some defects are beneficial, such as donors, acceptors, or luminescence centers. They are classified into point, line, and planar defects. Semiconducting properties of most interest are predominantly caused by crystal defects.
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